RES SMD 357K OHM 0.05% 1/4W 1210
TVS DIODE 136.8V 245.7V AXIAL
MOSFET 2N-CH 30V 15A 5PTAB
DC DC CONVERTER 12V 1W
类型 | 描述 |
---|---|
系列: | NexFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Half Bridge) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 15A |
rds on (max) @ id, vgs: | 16.3mOhm @ 8A, 8V |
vgs(th) (最大值) @ id: | 1.9V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 564pF @ 15V |
功率 - 最大值: | 4W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 5-LGA |
供应商设备包: | 5-PTAB (3x2.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSO200N03Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SI3585CDV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 3.9A 6TSOP |
|
NVTJD4001NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 0.25A SC-88 |
|
APTC60TAM35PGRoving Networks / Microchip Technology |
MOSFET 6N-CH 600V 72A SP6-P |
|
CSD87503Q3ETexas Instruments |
MOSFET 2 N-CHANNEL 30V 10A 8SON |
|
SI5504BDC-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 30V 4A 1206-8 |
|
FDZ1905PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 6WLCSP |
|
SP001017058Rochester Electronics |
IPP60R380P6 - 600V N-CHANNEL |
|
FDC6310PSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.2A SSOT6 |
|
ALD114813PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
SI3552DV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V 6-TSOP |
|
SQJB42EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
SI7922DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 100V 1.8A 1212-8 |