English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A |
| rds on (max) @ id, vgs: | 105mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 3.2nC @ 5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 1.15W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 |
| 供应商设备包: | 6-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SQJB42EP-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 40V POWERPAK SO8 |
|
SI7922DN-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 100V 1.8A 1212-8 |
|
SSM6N815R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 100V 2A 6TSOPF |
|
SH8MA4TB1ROHM Semiconductor |
SH8MA4TB1 IS LOW ON-RESISTANCE A |
|
NTMD6P02R2SGRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
APTM10AM02FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 100V 495A SP6 |
|
FDSS2407Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 62V 3.3A 8SOIC |
|
DMP3048LSD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 P-CHANNEL 30V 4.8A 8SO |
|
IRF7503TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 30V 2.4A MICRO8 |
|
FQS4900TFSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 60V/300V 8SOP |
|
SPP03N60C3Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
SI4948BEY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 60V 2.4A 8-SOIC |
|
IRF7104PBFRochester Electronics |
HEXFET POWER MOSFET |
