类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SLA5201Sanken Electric Co., Ltd. |
MOSFET 3N/3P-CH 600V 7A 15-SIP |
|
DMN5010VAK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 50V 0.28A SOT-563 |
|
SQ3585EV-T1_GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 6TSOP |
|
FDS6984ASSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 5.5A/8.5A 8SOIC |
|
SSS4N60BTRochester Electronics |
TRANS MOSFET N-CH 600V 4A 3PIN(3 |
|
RF1S40N10LERochester Electronics |
40A, 100V, 0.04OHM, N-CHANNEL, |
|
AON5820Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 20V 10A 6DFN |
|
HUFA76413DK8TRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB12N50TMRochester Electronics |
TRANS MOSFET N-CH 500V 12.1A 3PI |
|
PMDXB950UPELZNexperia |
20 V, DUAL P-CHANNEL TRENCH MOSF |
|
SQ3989EV-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 2.5A 6TSOP |
|
MMDF2P02ER2GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI1023X-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.37A SC89-6 |