English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A |
| rds on (max) @ id, vgs: | 9.5mOhm @ 10A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 1510pF @ 10V |
| 功率 - 最大值: | 1.7W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-SMD, Flat Lead Exposed Pad |
| 供应商设备包: | 6-DFN-EP (2x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUFA76413DK8TRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQB12N50TMRochester Electronics |
TRANS MOSFET N-CH 500V 12.1A 3PI |
|
PMDXB950UPELZNexperia |
20 V, DUAL P-CHANNEL TRENCH MOSF |
|
SQ3989EV-T1_GE3Vishay / Siliconix |
MOSFET 2 P-CH 30V 2.5A 6TSOP |
|
MMDF2P02ER2GRochester Electronics |
P-CHANNEL POWER MOSFET |
|
SI1023X-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.37A SC89-6 |
|
FD6M043N08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
MIC5018BM4TRRochester Electronics |
HIGH-SIDE MOSFET DRIVER |
|
CSD75204W15Rochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
EFC4619R-TRSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH EFCP |
|
SSM6N57NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 4A UDFN6 |
|
FDY1002PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 830MA SOT563F |
|
IPG20N06S4L26AATMA1Rochester Electronics |
IPG20N06 - 55V-60V N-CHANNEL AUT |
