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| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | 3A |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3.9nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 410pF @ 10V |
| 功率 - 最大值: | 700mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 9-UFBGA, DSBGA |
| 供应商设备包: | 9-DSBGA |
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电话: 00852-52612101
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