类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | 6 N-Channel (3-Phase Bridge) |
场效应管特征: | Standard |
漏源电压 (vdss): | 1000V (1kV) |
电流 - 连续漏极 (id) @ 25°c: | 22A |
rds on (max) @ id, vgs: | 420mOhm @ 11A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 186nC @ 10V |
输入电容 (ciss) (max) @ vds: | 5200pF @ 25V |
功率 - 最大值: | 390W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP6 |
供应商设备包: | SP6-P |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDG6301NSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 25V 0.22A SC70-6 |
|
ALD110914PALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
CPH6339-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
NVMFD5489NLWFT3GRochester Electronics |
N-CHANNEL, MOSFET |
|
NVMFD5877NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 6A SO8FL |
|
FDMS9408Rochester Electronics |
N-CHANNEL MOSFET |
|
FDS8958Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
ALD114913SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
SI4276DY-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SO |
|
TD9944TG-GRoving Networks / Microchip Technology |
MOSFET 2N-CH 240V 8SOIC |
|
UPA603T-T2-ARochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
BUK7K5R6-30E,115Nexperia |
MOSFET 2N-CH 30V 40A LFPAK56D |
|
AON2810Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 2A 6DFN |