English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 40A |
| rds on (max) @ id, vgs: | 10mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 30.1nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2163pF @ 25V |
| 功率 - 最大值: | 64W |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | SOT-1205, 8-LFPAK56 |
| 供应商设备包: | LFPAK56D |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI3590DV-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V 2.5A 6-TSOP |
|
SIA931DJ-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 30V 4.5A SC70-6L |
|
EMH2314-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
DMN6040SSDQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 5.0A SO-8 |
|
ALD110800PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
SI4936ADY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 4.4A 8-SOIC |
|
PMZ370UNE,315Rochester Electronics |
0.9A, 30V, N CHANNEL, MOSFET, S |
|
ECH8604-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
SSM6P35FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2P-CH 20V 0.1A ES6 |
|
SMA5118Sanken Electric Co., Ltd. |
MOSFET 6N-CH 500V 5A 12-SIP |
|
MSCSM70AM025CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
DMC3401LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V SOT363 |
|
CSD88537NDTTexas Instruments |
MOSFET 2N-CH 60V 15A 8SOIC |
