English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A |
| rds on (max) @ id, vgs: | 4.9mOhm @ 15A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 35µA |
| 栅极电荷 (qg) (max) @ vgs: | 54nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2245pF @ 10V |
| 功率 - 最大值: | 1.7W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DirectFET™ Isometric SA |
| 供应商设备包: | DIRECTFET™ SA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7380PBFRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS9933ASanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3.8A 8SOIC |
|
FF23MR12W1M1B11BOMA1IR (Infineon Technologies) |
MOSFET 2 N-CH 1200V 50A MODULE |
|
MIC4424CWMTRRochester Electronics |
DUAL 3A-PEAK LOW-SIDE MOSFET DRI |
|
SI9945BDY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 5.3A 8-SOIC |
|
2N7002KDW-TPMicro Commercial Components (MCC) |
N-CHANNEL,MOSFETS,SOT-363 PACKAG |
|
IRF7389TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 30V 8-SOIC |
|
SPA20N60CFDRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
SQ4946AEY-T1_GE3Vishay / Siliconix |
MOSFET 2N-CH 60V 7A |
|
FDG8850NZSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 750MA SC88 |
|
IPG20N06S2L50AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
NTE2960NTE Electronics, Inc. |
MOSFET-N-CHAN ENHANCEMENT |
|
DMG4511SK4-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 35V TO252-4L |
