English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A |
| rds on (max) @ id, vgs: | 70mOhm @ 1.9A, 4.5V |
| vgs(th) (最大值) @ id: | 0.9V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14.5nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 880pF @ 6V |
| 功率 - 最大值: | 1.4W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-VDFN Exposed Pad |
| 供应商设备包: | DFN2020-6 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SP8M5FRATBROHM Semiconductor |
4V DRIVE NCH+PCH MOSFET |
|
DMG1016UDW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT363 |
|
2N7002PV,115Nexperia |
MOSFET 2N-CH 60V 0.35A SOT-666 |
|
FF2MR12KM1HOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDMD8680Sanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 80V 66A 8-PQFN |
|
SSM6N15AFE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A ES6 |
|
IPI100N12S305AKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
ECH8661-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5.5A ECH8 |
|
PMDXB550UNEZNexperia |
MOSFET 2N-CH 30V 0.59A 6DFN |
|
STS8DN3LLH5STMicroelectronics |
MOSFET 2N-CH 30V 10A 8SO |
|
CSD87501LTTexas Instruments |
MOSFET 2N-CH 30V 10PICOSTAR |
|
PMDXB1200UPEZNexperia |
MOSFET 2P-CH 30V 0.41A 6DFN |
|
AON6992Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 19A/31A |
