类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 20V |
电流 - 连续漏极 (id) @ 25°c: | 1.07A, 845mA |
rds on (max) @ id, vgs: | 450mOhm @ 600mA, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.74nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 60.67pF @ 10V |
功率 - 最大值: | 330mW |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
供应商设备包: | SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2N7002PV,115Nexperia |
MOSFET 2N-CH 60V 0.35A SOT-666 |
|
FF2MR12KM1HOSA1IR (Infineon Technologies) |
MEDIUM POWER 62MM |
|
FDMD8680Sanyo Semiconductor/ON Semiconductor |
MOSFET 2 N-CH 80V 66A 8-PQFN |
|
SSM6N15AFE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 30V 0.1A ES6 |
|
IPI100N12S305AKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
ECH8661-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5.5A ECH8 |
|
PMDXB550UNEZNexperia |
MOSFET 2N-CH 30V 0.59A 6DFN |
|
STS8DN3LLH5STMicroelectronics |
MOSFET 2N-CH 30V 10A 8SO |
|
CSD87501LTTexas Instruments |
MOSFET 2N-CH 30V 10PICOSTAR |
|
PMDXB1200UPEZNexperia |
MOSFET 2P-CH 30V 0.41A 6DFN |
|
AON6992Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 19A/31A |
|
SQ4920EY-T1_BE3Vishay / Siliconix |
MOSFET 2N-CH 30V 8A 8SO |
|
HUFA76429D3ST_QF085Rochester Electronics |
20A, 60V, 0.029OHM, N CHANNEL , |