English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 60V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.3A, 3.9A |
| rds on (max) @ id, vgs: | 58mOhm @ 4.3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 20nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 665pF @ 15V |
| 功率 - 最大值: | 3.1W, 3.4W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9K25-40EXNexperia |
MOSFET 2N-CH 40V 18.2A 56LFPAK |
|
DMC31D5UDA-7BZetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V X2-DFN0806 |
|
DMN2053UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 T&R |
|
BUK7230-55ARochester Electronics |
PFET, 38A I(D), 55V, 0.003OHM, 1 |
|
STS1DNC45STMicroelectronics |
MOSFET 2N-CH 450V 0.4A 8SOIC |
|
DMG1016VQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N/P-CH 20V SOT563 |
|
NVMFD5852NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 40V 15A SO8FL |
|
SSM6L36FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
|
ECH8653-S-TL-HRochester Electronics |
MOSFET 2N-CH 20V 7.5A ECH8 |
|
BSL306NH6327XTSA1Rochester Electronics |
BSL306 - 250V-600V SMALL SIGNAL |
|
MCH6663-TL-HRochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
SSM6N7002KFU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET 2N-CH 60V 0.3A |
|
AUIRFS4410ZTRL-INFRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
