English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.8A |
| rds on (max) @ id, vgs: | 50mOhm @ 4A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 10.4nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 920pF @ 15V |
| 功率 - 最大值: | 500mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-UDFN Exposed Pad |
| 供应商设备包: | 6-UDFN (2x2) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CSD75211W1723Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
ZXMN6A25DN8TAZetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 3.8A 8-SOIC |
|
FDC6327CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 20V SSOT-6 |
|
CMLDM7003TG TR PBFREECentral Semiconductor |
MOSFET 2N-CH 50V 0.28A SOT563 |
|
FDS89141Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 100V 3.5A 8SOIC |
|
SQ4282EY-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CHANNEL 30V 8A 8SOIC |
|
PMGD130UN,115Rochester Electronics |
PMGD130UN - SMALL SIGNAL, SC-88 |
|
ALD114804PCLAdvanced Linear Devices, Inc. |
MOSFET 4N-CH 10.6V 16DIP |
|
ALD114904ASALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
DMG9933USD-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2P-CH 20V 4.6A 8SO |
|
ALD110914SALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
|
AON6816Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 17A DFN5X6 |
|
FDS9933BZRochester Electronics |
P-CHANNEL POWER MOSFET |
