English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A |
| rds on (max) @ id, vgs: | 6.2mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 45nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1540pF @ 15V |
| 功率 - 最大值: | 2.8W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerSMD, Flat Leads |
| 供应商设备包: | 8-DFN-EP (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS9933BZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
EMH2408-TL-HRochester Electronics |
SMALL SIGNAL FET |
|
BSO615CGHUMA1Rochester Electronics |
PFET, 3.1A I(D), 60V, 0.11OHM, 2 |
|
SQJQ960EL-T1_GE3Vishay / Siliconix |
MOSFET 2 N-CH 60V POWERPAK8X8 |
|
MSCSM120AM31CT1AGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP1F |
|
ITF86130SK8TRochester Electronics |
14A, 30V, 0.012OHM, N-CHANNEL , |
|
2SK2415-AZRochester Electronics |
SWITCHING N-CHANNEL POWER MOSFET |
|
UPA2450BTL-E1-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SSM6N67NU,LFToshiba Electronic Devices and Storage Corporation |
SMALL LOW RON DUAL NCH MOSFETS I |
|
NVMFD5489NLT3GRochester Electronics |
N-CHANNEL, MOSFET |
|
PMV50ENEA,215Rochester Electronics |
3.9A, 30V, N CHANNEL, SILICON, M |
|
SSM6P15FE(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET 2P-CH 30V 0.1A ES6 |
|
EMH2417R-TL-HRochester Electronics |
POWER, N-CHANNEL, MOSFET |
