MOSFET 2N-CH 100V 16A 8TDSON
DC DC CONVERTER
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, OptiMOS™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 100V |
电流 - 连续漏极 (id) @ 25°c: | 16A |
rds on (max) @ id, vgs: | 61mOhm @ 16A, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 90µA |
栅极电荷 (qg) (max) @ vgs: | 11nC @ 10V |
输入电容 (ciss) (max) @ vds: | 845pF @ 25V |
功率 - 最大值: | 29W |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount, Wettable Flank |
包/箱: | 8-PowerVDFN |
供应商设备包: | PG-TDSON-8-10 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI4963BDY-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.9A 8SOIC |
|
IPG20N06S2L65AATMA1IR (Infineon Technologies) |
MOSFET 2N-CH 55V 20A 8TDSON |
|
SH8M2TB1ROHM Semiconductor |
MOSFET N/P-CH 30V 3.5A SOP8 |
|
VT6K1T2CRROHM Semiconductor |
MOSFET 2N-CH 20V 0.1A VMT6 |
|
HP8S36TBROHM Semiconductor |
30V NCH+NCH MIDDLE POWER MOSFET, |
|
QS6K1TRROHM Semiconductor |
MOSFET 2N-CH 30V 1A TSMT6 |
|
DMP2108UCB6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-WLB1510-6 |
|
FDMS7602SSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 30V 12A/17A POWER56 |
|
NDS8947Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
QH8K22TCRROHM Semiconductor |
QH8K22 IS LOW ON - RESISTANCE MO |
|
FDMA6023PZTSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3.6A 6MICROFET |
|
PMV280ENEA,215Rochester Electronics |
1.1A, 100V, N CHANNEL, SILICON, |
|
APTM50AM38STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 90A SP4 |