English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 12V, 20V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A, 1.5A |
| rds on (max) @ id, vgs: | 29mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15nC @ 8V |
| 输入电容 (ciss) (max) @ vds: | 500pF @ 6V |
| 功率 - 最大值: | 6.5W, 5W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | PowerPAK® SC-70-6 Dual |
| 供应商设备包: | PowerPAK® SC-70-6 Dual |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDS8958A-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 30V 7A/5A 8SOIC |
|
DMN3190LDW-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 30V 1A SOT363 |
|
ALD110900APALAdvanced Linear Devices, Inc. |
MOSFET 2N-CH 10.6V 8DIP |
|
SI1539CDL-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 30V SOT363 |
|
SI1902DL-T1-BE3Vishay / Siliconix |
MOSFET 2N-CH 20V 0.66A SC-70-6 |
|
RMD7N40DNRectron USA |
MOSFET 2 N-CH 40V 7A /20A 8-DFN |
|
FDS4488Rochester Electronics |
0.0079A, 30V, N-CHANNEL MOSFET |
|
NVMFD5C680NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 26A S08FL |
|
FDG6318PZSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 0.5A SC70-6 |
|
FC6946010RPanasonic |
MOSFET 2N-CH 60V 0.1A SSMINI6 |
|
NDC7001CSanyo Semiconductor/ON Semiconductor |
MOSFET N/P-CH 60V SSOT6 |
|
FDS6982Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPI60R380C6Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
