English
简体中文
RES 5.11K OHM 0.1% 1/4W 0805
MOSFET N/P-CH 20V/8V SOT-363
CAP FILM 0.022UF 10% 1KVDC RAD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N and P-Channel |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 20V, 8V |
| 电流 - 连续漏极 (id) @ 25°c: | 630mA, 775mA |
| rds on (max) @ id, vgs: | 375mOhm @ 630mA, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 3nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | 46pF @ 20V |
| 功率 - 最大值: | 270mW |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
| 供应商设备包: | SC-88/SC70-6/SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTM120TDU57PGMicrosemi |
MOSFET 6N-CH 1200V 17A SP6-P |
|
STS4C3F60LSTMicroelectronics |
MOSFET N/P-CH 60V 4A/3A 8SOIC |
|
SI1023X-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.37A SOT563F |
|
IRF8852TRPBFIR (Infineon Technologies) |
MOSFET 2N-CH 25V 7.8A 8TSSOP |
|
FDG6303N_GSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
AON5802BAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 7.2A 6DFN |
|
AO4812_101Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 6A |
|
IRF7338TRPBFIR (Infineon Technologies) |
MOSFET N/P-CH 12V 6.3A 8-SOIC |
|
HAT2210RWS-ERenesas Electronics America |
MOSFET N-PAK 8SOP |
|
AO4818BL_102Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH DUAL 30V 8SOIC |
|
AO4818BL_101Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 8A 8-SOIC |
|
NTZD5110NT5GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 60V 0.294A SOT563 |
|
AO4803LAlpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 30V 5A 8-SOIC |