English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | 2 P-Channel (Dual) |
| 场效应管特征: | Logic Level Gate |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.7A |
| rds on (max) @ id, vgs: | 270mOhm @ 1.2A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 180pF @ 25V |
| 功率 - 最大值: | 1.25W |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| 供应商设备包: | Micro8™ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTJD2152PT4Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 8V 0.775A SOT-363 |
|
FMP26-02PWickmann / Littelfuse |
MOSFET N/P-CH 200V 26A/17A I4PAC |
|
SI7911DN-T1-GE3Vishay / Siliconix |
MOSFET 2P-CH 20V 4.2A 1212-8 |
|
SI1028X-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V SC89-6 |
|
BSD235C L6327IR (Infineon Technologies) |
MOSFET N/P-CH 20V SOT-363 |
|
SI1972DH-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 1.3A SC-70-6 |
|
SI1034X-T1-E3Vishay / Siliconix |
MOSFET 2N-CH 20V 0.18A SOT563F |
|
SI5920DC-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 8V 4A 1206-8 |
|
AON6973AAlpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 22A/30A 8DFN |
|
IRF7325IR (Infineon Technologies) |
MOSFET 2P-CH 12V 7.8A 8-SOIC |
|
FDMA1027PTSanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 3A MICROFET |
|
SI4973DY-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 30V 5.8A 8-SOIC |
|
SI5509DC-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 6.1A 1206-8 |
