类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | 2 P-Channel (Dual) |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 12V |
电流 - 连续漏极 (id) @ 25°c: | 5.5A |
rds on (max) @ id, vgs: | 25mOhm @ 5.4A, 4.5V |
vgs(th) (最大值) @ id: | 900mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 22nC @ 4.5V |
输入电容 (ciss) (max) @ vds: | 1984pF @ 6V |
功率 - 最大值: | 1W |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AO4807L_102Alpha and Omega Semiconductor, Inc. |
MOSFET 2P-CH 8-SOIC |
|
NDC7002N_SB9G007Sanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 50V 0.51A 6-SSOT |
|
MP6K11TCRROHM Semiconductor |
MOSFET 2N-CH 30V 3.5A MPT6 |
|
SI5517DU-T1-E3Vishay / Siliconix |
MOSFET N/P-CH 20V 6A CHIPFET |
|
SSM6P35FE,LMToshiba Electronic Devices and Storage Corporation |
MOSFET 2NCH 20V 100MA ES6 |
|
SI1905DL-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 8V 0.57A SC70-6 |
|
SP8M9TBROHM Semiconductor |
MOSFET N/P-CH 30V 9A/5A 8SOIC |
|
IRF5850TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.2A 6-TSOP |
|
UPA2375T1P-E1-ARenesas Electronics America |
MOSFET 2N-CH 24V |
|
APTMC120AM16CD3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 131A D3 |
|
AON4605_001Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
|
APTMC120TAM33CTPAGRoving Networks / Microchip Technology |
MOSFET 6N-CH 1200V 78A SP6-P |
|
NTHD4401PT3Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.1A CHIPFET |