类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N and P-Channel |
场效应管特征: | Logic Level Gate |
漏源电压 (vdss): | 30V |
电流 - 连续漏极 (id) @ 25°c: | 9A, 5A |
rds on (max) @ id, vgs: | 18mOhm @ 9A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 21nC @ 5V |
输入电容 (ciss) (max) @ vds: | 1190pF @ 10V |
功率 - 最大值: | 2W |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRF5850TRPBFIR (Infineon Technologies) |
MOSFET 2P-CH 20V 2.2A 6-TSOP |
|
UPA2375T1P-E1-ARenesas Electronics America |
MOSFET 2N-CH 24V |
|
APTMC120AM16CD3AGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1200V 131A D3 |
|
AON4605_001Alpha and Omega Semiconductor, Inc. |
MOSFET N/P-CH 30V 4.3A/3.4A 8DFN |
|
APTMC120TAM33CTPAGRoving Networks / Microchip Technology |
MOSFET 6N-CH 1200V 78A SP6-P |
|
NTHD4401PT3Sanyo Semiconductor/ON Semiconductor |
MOSFET 2P-CH 20V 2.1A CHIPFET |
|
SI1913DH-T1-E3Vishay / Siliconix |
MOSFET 2P-CH 20V 0.88A SC70-6 |
|
PMWD16UN,518NXP Semiconductors |
MOSFET 2N-CH 20V 9.9A 8TSSOP |
|
SI4916DY-T1-GE3Vishay / Siliconix |
MOSFET 2N-CH 30V 10A 8-SOIC |
|
NTJD4401NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 20V 0.63A SOT363 |
|
AON4807_101Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH DUAL DFN |
|
AON7932_101Alpha and Omega Semiconductor, Inc. |
MOSFET 2N-CH 30V 6.6A/8.1A 8DFN |
|
SI4562DY-T1-GE3Vishay / Siliconix |
MOSFET N/P-CH 20V 8-SOIC |