类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | 2 N-Channel (Dual) |
场效应管特征: | Standard |
漏源电压 (vdss): | 60V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Tc) |
rds on (max) @ id, vgs: | 40mOhm @ 4.5A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 22nC @ 10V |
输入电容 (ciss) (max) @ vds: | 865pF @ 25V |
功率 - 最大值: | 4W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
2SK3618-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
MSCMC170AM08CT6LIAGRoving Networks / Microchip Technology |
PM-MOSFET-SIC-SBD~-SP6C LI |
|
APTM10AM05FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 100V 278A SP4 |
|
MSCC60VRM45TAPGRoving Networks / Microchip Technology |
PM-MOSFET-COOLMOS-SP6P |
|
BUZ21P2Rochester Electronics |
100V, N-CHANNEL POWER MOSFET |
|
NVMFD016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
STM168026VRochester Electronics |
SYNCH TRANS 360HZ-2.6KHZ |
|
NP30N04QUK-E1-AYRenesas Electronics America |
POWER TRS2 AUTOMOTIVE MOS 8P HSO |
|
MCB20P1200LB-TRRWickmann / Littelfuse |
MCB20P1200LB-TRR |
|
HUF75333P3_NS2552Rochester Electronics |
56A, 55V, 0.016 OHM, N CHANNEL, |
|
BLA6H1011-600Rochester Electronics |
RF PFET, 2-ELEMENT, L BAND, SILI |
|
RJK0230DPA-00#J5ARochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
MCH5815-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |