类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD4906NAT4HRochester Electronics |
NTD4906N - 30V, 54A, N-CHANNEL |
|
APTM50AM17FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 180A SP6 |
|
MRF18030BLSR3Rochester Electronics |
RF L BAND, N-CHANNEL |
|
CA3140R1167Rochester Electronics |
OPERATIONAL AMPLIFIER |
|
NTMFD030N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
RF1S640Rochester Electronics |
18A, 200V, 0.180 OHM, N-CHANNEL |
|
APTM100H45FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 1000V 18A SP3 |
|
STL52DN4LF7AGSTMicroelectronics |
AUTOMOTIVE-GRADE DUAL N-CHANNEL |
|
PMDXB600UNEL,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL, |
|
MRF9030MBR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
APTC60HM70BT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 39A SP3 |
|
MRF9060MR1Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
|
IRF9622156Rochester Electronics |
3A, 200V, 2.4OHM, P-CHANNEL, POW |