English
简体中文
THERM PAD 19.05MMX10.41MM GRAY
MOSFET DUAL N-CH 30V POWERPAIR 6
D38999/23HE26PE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® Gen IV |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual), Schottky |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 30V |
| 电流 - 连续漏极 (id) @ 25°c: | 23A (Ta), 40A (Tc), 35A (Ta), 60A (Tc) |
| rds on (max) @ id, vgs: | 4mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA, 2.3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22nC, 56nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1060pF, 2650pF @ 15V |
| 功率 - 最大值: | 3.4W (Ta), 26.6W (Tc), 3.7W (Ta), 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
ECH8667-TL-HX-SARochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
APTM20HM20FTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 89A SP4 |
|
|
NTMFD5875NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A SO8FL |
|
|
RJK03S3DPA-00#J5ARochester Electronics |
N-CHANNEL MOSFET |
|
|
DMT3006LPB-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI506 |
|
|
DMN3061SVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V TSOT26 |
|
|
DMN16M0UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V X4-DSN2112- |
|
|
MAX8783GTC+Rochester Electronics |
SINGLE-PHASE SYNCHRONOUS MOSFET |
|
|
MTI200WX75GD-SMDWickmann / Littelfuse |
IGBT MOD MOSFET SIXPACK ISOPLUS |
|
|
DMN3022LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
IRF512S2532Rochester Electronics |
4.9A, 100V, 0.74 OHM, N-CHANNEL |
|
|
MRF8S18120HSR3,128Rochester Electronics |
RF L BAND, N-CHANNEL |
|
|
2SJ356(0)-T2-AZRochester Electronics |
P-CHANNEL MOSFET |