English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Half Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 600V |
| 电流 - 连续漏极 (id) @ 25°c: | 72A |
| rds on (max) @ id, vgs: | 35mOhm @ 72A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 5.4mA |
| 栅极电荷 (qg) (max) @ vgs: | 518nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 14000pF @ 25V |
| 功率 - 最大值: | 416W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP1 |
| 供应商设备包: | SP1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF75842S3Rochester Electronics |
MOSFET N-CH 150V 43A D2PAK |
|
|
SIZ998BDT-T1-GE3Vishay / Siliconix |
DUAL N-CHANNEL 30-V (D-S) MOSFET |
|
|
SFT1405-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
|
DMC2053UVTQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V TSOT26 |
|
|
FCI17N60Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FS50KM-2-J1#E51Rochester Electronics |
DISCRETE / POWER MOSFET |
|
|
FDS8926Rochester Electronics |
MOSFET 2N-CH 30V 5.5A 8-SO |
|
|
FMM50-025TFWickmann / Littelfuse |
MOSFET 2N-CH 250V 30A I4-PAC |
|
|
DMT3006LDV-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V 30V POWERDI333 |
|
|
2N6792TXRochester Electronics |
2A, 400V, 1.8OHM, N-CHANNEL |
|
|
APTC80H29T3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP3 |
|
|
FS10ASJ-3-T13#C02Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
|
DMT3022UEV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
