English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel (H-Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 800V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A |
| rds on (max) @ id, vgs: | 290mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 90nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 2254pF @ 25V |
| 功率 - 最大值: | 156W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP3 |
| 供应商设备包: | SP3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FS10ASJ-3-T13#C02Rochester Electronics |
HIGH SPEED SWITCHING N-CHANNEL |
|
|
DMT3022UEV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
PSMN013-40VLDXNexperia |
PSMN013-40VLD - DUAL N-CHANNEL 4 |
|
|
CAB006M12GM3Wolfspeed - a Cree company |
1200V 2B HALF-BRIDGE |
|
|
DMN3013LDG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
FDC655NRochester Electronics |
N-CHANNEL, MOSFET |
|
|
DMN3012LEG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 25V-30V POWERDI333 |
|
|
ICL7667R4616Rochester Electronics |
DUAL POWER MOSFET DRIVER |
|
|
2SJ293-ERochester Electronics |
15A, 60V, P-CHANNEL MOSFET |
|
|
NTTFS5C658NLTAGSanyo Semiconductor/ON Semiconductor |
AFSM T6 60V LL U8FL |
|
|
BUK7E8R3-40E127Rochester Electronics |
75A, 40V, 0.0074OHM, N CHANNEL, |
|
|
FDP2710_SN00168Rochester Electronics |
1-ELEMENT, N-CHANNEL |
|
|
IRFR220119Rochester Electronics |
4.6A 200V 0.800 OHM N-CHANNEL |
