CAP TANT 15UF 10% 10V 1611
CAP CER 0.056UF 1.5KV X7R 2225
BRIDGE RECT 1PHASE 50V 2A KBPM
PM-MOSFET-SIC-SBD~-SP6C
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | 2 N Channel (Phase Leg) |
场效应管特征: | Silicon Carbide (SiC) |
漏源电压 (vdss): | 1200V (1.2kV) |
电流 - 连续漏极 (id) @ 25°c: | 495A (Tc) |
rds on (max) @ id, vgs: | 5.2mOhm @ 240A, 20V |
vgs(th) (最大值) @ id: | 2.8V @ 6mA |
栅极电荷 (qg) (max) @ vgs: | 1392nC @ 20V |
输入电容 (ciss) (max) @ vds: | 18.1pF @ 1000V |
功率 - 最大值: | 2.031kW (Tc) |
工作温度: | -40°C ~ 175°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | Module |
供应商设备包: | SP6C |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMN13M9UCA6-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2 N-CHANNEL X3-DSN3518-6 |
|
ISL6605CR-TR5151Rochester Electronics |
HALF BRIDGE BASED MOSFET DRIVER, |
|
FW217-NMM-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
ECH8604-TL-E-SYRochester Electronics |
N-CHANNEL MOSFET |
|
APTM60H23FT1GRoving Networks / Microchip Technology |
MOSFET 4N-CH 600V 20A SP1 |
|
2N7002KDW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-363 |
|
RFG45N06LERochester Electronics |
45A, 60V, 0.028OHM, N-CHANNEL, |
|
NVMFD020N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8DFN 5X6 |
|
FW256-TL-ERochester Electronics |
N-CHANNEL SILICON MOSFET |
|
APTC80H29SCTGRoving Networks / Microchip Technology |
MOSFET 4N-CH 800V 15A SP4 |
|
FDB3652SB82059Rochester Electronics |
1-ELEMENT, N-CHANNEL |
|
APTM100A23STGRoving Networks / Microchip Technology |
MOSFET 2N-CH 1000V 36A SP4 |
|
2SJ662-DL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |