English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) Common Drain |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 24V |
| 电流 - 连续漏极 (id) @ 25°c: | 25A |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 49nC @ 4.5V |
| 输入电容 (ciss) (max) @ vds: | - |
| 功率 - 最大值: | 2.5W |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 10-SMD, No Lead |
| 供应商设备包: | 10-WLCSP (3.2x2.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STD1056T4-ONRochester Electronics |
N CHANNEL MOSFET |
|
|
2SJ409-90STRRochester Electronics |
20A, 100V, P-CHANNEL MOSFET |
|
|
FDPF5N50UTYDTURochester Electronics |
TRANS MOSFET N-CH 500V 4A T/R |
|
|
NTMS4503NR2G-001Rochester Electronics |
9A, 28V, N-CHANNEL MOSFET |
|
|
APTM20AM08FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 200V 208A SP4 |
|
|
MRF1570FT1Rochester Electronics |
RF 2-ELEMENT, ULTRA HIGH FREQUE |
|
|
DMN2024UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
|
NTND3184NZTAGRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
|
APTM10HM09FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 139A SP3 |
|
|
FS50KM-2-J2#E52Rochester Electronics |
DISCRETE / POWER MOSFET |
|
|
NTMFD024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
|
AOC3870AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 6DFN |
|
|
IRF1404PBF-ELRochester Electronics |
HEXFET POWER MOSFET |
