CAP FILM 0.68UF 5% 450VDC RADIAL
20A, 100V, P-CHANNEL MOSFET
类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
场效应管特征: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
输入电容 (ciss) (max) @ vds: | - |
功率 - 最大值: | - |
工作温度: | - |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FDPF5N50UTYDTURochester Electronics |
TRANS MOSFET N-CH 500V 4A T/R |
|
NTMS4503NR2G-001Rochester Electronics |
9A, 28V, N-CHANNEL MOSFET |
|
APTM20AM08FTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 200V 208A SP4 |
|
MRF1570FT1Rochester Electronics |
RF 2-ELEMENT, ULTRA HIGH FREQUE |
|
DMN2024UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET BVDSS: 8V-24V TSOT26 |
|
NTND3184NZTAGRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
APTM10HM09FT3GRoving Networks / Microchip Technology |
MOSFET 4N-CH 100V 139A SP3 |
|
FS50KM-2-J2#E52Rochester Electronics |
DISCRETE / POWER MOSFET |
|
NTMFD024N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V T6 8DFN |
|
AOC3870AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 6DFN |
|
IRF1404PBF-ELRochester Electronics |
HEXFET POWER MOSFET |
|
RF1S30P06Rochester Electronics |
30A, 60V, 0.065OHM, P-CHANNEL, |
|
OP241,005WeEn Semiconductors Co., Ltd |
OP241/UNCASED/NO MARK*CHIPS ON |