English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | 4 N-Channel (H-Bridge) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 600V |
| 电流 - 连续漏极 (id) @ 25°c: | 49A |
| rds on (max) @ id, vgs: | 45mOhm @ 24.5A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 150nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 7200pF @ 25V |
| 功率 - 最大值: | 250W |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包/箱: | SP1 |
| 供应商设备包: | SP1 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PMCXB900UEL/S500,147Rochester Electronics |
0.6A, 20V, 2-ELEMENT, N CHANNEL |
|
|
RFP70N06S5001Rochester Electronics |
70A, 60V, 0.014OHM, N-CHANNEL |
|
|
APTM50DDA10T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 500V 37A SP3 |
|
|
APTM20HM20STGRoving Networks / Microchip Technology |
MOSFET 4N-CH 200V 89A SP4 |
|
|
IRFP250S2453Rochester Electronics |
33A, 200V, 0.085 OHM, N-CHANNEL |
|
|
DMP2200UFCL-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 8V~24V U-DFN1616-6 |
|
|
IRFAUIRF540ZRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
|
IRF9640S2497Rochester Electronics |
11A, 200V, 0.500 OHM, P-CHANNEL |
|
|
DMN65D8LDWQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET 2N-CH 60V 180MA SOT363 |
|
|
HAT2050TWS-ERochester Electronics |
1A, 100V, N-CHANNEL MOSFET |
|
|
MHT1000HR5178Rochester Electronics |
N CHANNEL ENHANCEMENT-MODE RF PO |
|
|
NTMFD1D4N02P1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 8PQFN |
|
|
NVMFWD016N06CT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH DUAL 60V SO8FL |
