English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerPAIR®, TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | 2 N-Channel (Dual) |
| 场效应管特征: | Standard |
| 漏源电压 (vdss): | 25V |
| 电流 - 连续漏极 (id) @ 25°c: | 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc) |
| rds on (max) @ id, vgs: | 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA, 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 21nC, 98nC @ 10V |
| 输入电容 (ciss) (max) @ vds: | 1050pF, 4670pF @ 10V |
| 功率 - 最大值: | 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-PowerWDFN |
| 供应商设备包: | 8-PowerPair® (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APTC60DDAM24T3GRoving Networks / Microchip Technology |
MOSFET 2N-CH 600V 95A SP3 |
|
|
STD1056T4Rochester Electronics |
N CHANNEL MOSFET |
|
|
ICL7667MTV/883BRochester Electronics |
DUAL MARKED (5962-8766001GC) |
|
|
HUF75637S3Rochester Electronics |
MOSFET N-CH 100V 44A D2PAK |
|
|
EFC4C002NLTDGSanyo Semiconductor/ON Semiconductor |
MOSFET 2N-CH 8WLCSP |
|
|
VMK165-007TWickmann / Littelfuse |
MOSFET 2N-CH 70V 165A TO-240AA |
|
|
APTC80A15SCTGRoving Networks / Microchip Technology |
MOSFET 2N-CH 800V 28A SP4 |
|
|
IAUC60N04S6N031HATMA1IR (Infineon Technologies) |
IAUC60N04S6N031HATMA1 |
|
|
CAB008M12GM3Wolfspeed - a Cree company |
1200V 2B HALF-BRIDGE |
|
|
SIA923EDJ-T4-GE3Vishay / Siliconix |
MOSFET P-CH 20V SC-70-6 |
|
|
APTM20AM05FGRoving Networks / Microchip Technology |
MOSFET 2N-CH 200V 317A SP6 |
|
|
2SD1936T-ACRochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
MAX8791AGTA+TRochester Electronics |
SINGLE-PHASE, SYNCHRONOUS MOSFET |
