RLY GEN PURP DPDT 8A 5VDC
MOSFET 2N-CH 200V 89A SP4
类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Discontinued at Digi-Key |
场效应管类型: | 2 N-Channel (Dual) Asymmetrical |
场效应管特征: | Standard |
漏源电压 (vdss): | 200V |
电流 - 连续漏极 (id) @ 25°c: | 89A |
rds on (max) @ id, vgs: | 24mOhm @ 44.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 2.5mA |
栅极电荷 (qg) (max) @ vgs: | 112nC @ 10V |
输入电容 (ciss) (max) @ vds: | 6850pF @ 25V |
功率 - 最大值: | 357W |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Chassis Mount |
包/箱: | SP4 |
供应商设备包: | SP4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOC3870Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 6DFN |