类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
晶体管型: | GaN HEMT |
频率: | 6GHz |
获得: | 11dB |
电压测试: | 28 V |
额定电流(安培): | - |
噪声系数: | - |
电流测试: | 70 mA |
功率输出: | 6W |
额定电压: | 160 V |
包/箱: | 360BH |
供应商设备包: | 360BH |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CGHV96050F1Wolfspeed - a Cree company |
RF MOSFET HEMT 40V 440210 |
|
MRF6P21190HR5NXP Semiconductors |
RF MOSFET LDMOS 28V NI-1230 |
|
BLF2425M8L140JAmpleon |
RF FET LDMOS 65V 19DB SOT502A |
|
PD54008S-ESTMicroelectronics |
FET RF 25V 500MHZ PWRSO-10 |
|
CLF1G0035-100PUAmpleon |
RF MOSFET HEMT 50V LDMOST |
|
BLF888EUAmpleon |
RF FET LDMOS 104V 17DB SOT539A |
|
CLF1G0035S-200PUAmpleon |
RF FET 50V 11DB SOT1228B |
|
150-102N02A-00Wickmann / Littelfuse |
RF MOSFET N-CHANNEL DE150 |
|
CG2H80060D-GP4Wolfspeed - a Cree company |
RF DISCRETE |
|
LET20030CSTMicroelectronics |
FET RF 80V 2GHZ M243 |
|
MRFE6VP6600NR3NXP Semiconductors |
RF MOSFET LDMOS DL 50V OM780-4 |
|
MRF6V2300NR5Rochester Electronics |
RF POWER FIELD-EFFECT TRANSISTOR |
|
MRF8S21100HR5Rochester Electronics |
RF POWER N-CHANNEL, MOSFET |