类型 | 描述 |
---|---|
系列: | GaN |
包裹: | Tube |
零件状态: | Active |
晶体管型: | HEMT |
频率: | 0Hz ~ 6GHz |
获得: | 13dB |
电压测试: | 28 V |
额定电流(安培): | 3.5A |
噪声系数: | - |
电流测试: | 100 mA |
功率输出: | 8W |
额定电压: | 84 V |
包/箱: | 440109 |
供应商设备包: | 440109 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BLF2425M9L30UAmpleon |
RF FET LDMOS 65V 18.5DB SOT1135A |
|
CLF1G0060S-30UAmpleon |
RF FET HEMT 150V 13DB SOT1227B |
|
BLF2425M9LS140JAmpleon |
TRANS RF 140W LDMOST |
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BLF8G20LS-220UAmpleon |
RF FET LDMOS 65V 18.9DB SOT502B |
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RFM01U7P(TE12L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH PW-MINI |
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ARF466AGRoving Networks / Microchip Technology |
RF FET N CH 1000V 13A TO264 |
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PD57030-ESTMicroelectronics |
FET RF 65V 945MHZ PWRSO10 |
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MRF6S9160HSR3Rochester Electronics |
RF ULTRA HIGH FREQUENCY BAND, N- |
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MRF8S9102NR3Rochester Electronics |
RF PFET ULTRA HIGH FREQUENCY B |
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PD55025TR-ESTMicroelectronics |
TRANS RF N-CH FET POWERSO-10RF |
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BLC10G18XS-550AVTYAmpleon |
BLC10G18XS-550AVT/SOT1258/REEL |
|
BLS9G3135LS-115UAmpleon |
BLS9G3135LS-115/SOT1135/TRAY |
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BLP8G10S-45PGYAmpleon |
RF FET LDMOS 65V 20.8DB 4BESOP |