







DIODE GEN PURP 150V 200MA DO35
RF FET LDMOS 65V 18.5DB SOT1135A
IC SRAM 4.5MBIT PARALLEL 119PBGA
SIGNAL LINE EMI FERRITE CHIP BEA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 晶体管型: | LDMOS |
| 频率: | 2.45GHz |
| 获得: | 18.5dB |
| 电压测试: | 32 V |
| 额定电流(安培): | - |
| 噪声系数: | - |
| 电流测试: | 20 mA |
| 功率输出: | 30W |
| 额定电压: | 65 V |
| 包/箱: | SOT-1135A |
| 供应商设备包: | SOT1135A |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NE3520S03-T1C-ARochester Electronics |
RF K BAND, GALLIUM ARSENIDE, N-C |
|
|
BLL6H1214L-250,112Rochester Electronics |
RF PFET, 1-ELEMENT, L BAND, SILI |
|
|
TA9210DTagore Technology |
RF GAN TRANSISTOR 12.5W |
|
|
MRF175GVMetelics (MACOM Technology Solutions) |
FET RF 2CH 65V 225MHZ 375-04 |
|
|
BLS6G2933S-130,112Ampleon |
RF FET LDMOS 60V 12.5DB SOT9221 |
|
|
2SJ277-DL-ERochester Electronics |
PCH 4V DRIVE SERIES |
|
|
BF1202WR,135Rochester Electronics |
MOSFET N-CH DUAL GATE 4DFP |
|
|
MRFE6P3300HR3Rochester Electronics |
RF 2-ELEMENT, ULTRA HIGH FREQUEN |
|
|
BLA8H0910L-500UAmpleon |
RF MOSFET LDMOS 50V SOT502A |
|
|
AFV121KHR5NXP Semiconductors |
IC TRANS RF LDMOS |
|
|
MRFE6VP6300HSR5NXP Semiconductors |
FET RF 2CH 130V 230MHZ NI780S-4 |
|
|
BLF645,112Ampleon |
RF FET LDMOS 65V 16DB SOT540A |
|
|
BLM7G1822S-80ABYAmpleon |
RF FET LDMOS 65V 31DB SOT12111 |