类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
晶体管型: | LDMOS |
频率: | 1.805GHz ~ 1.995GHz |
获得: | 19.3dB |
电压测试: | 28 V |
额定电流(安培): | 1.4µA |
噪声系数: | - |
电流测试: | 1.6 A |
功率输出: | 60W |
额定电压: | 65 V |
包/箱: | SOT1275-3 |
供应商设备包: | SOT1275-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RFM04U6P(TE12L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH PW-MINI |
|
MRF6V2150NR1NXP Semiconductors |
RF MOSFET LDMOS 50V TO270 |
|
MRF7S16150HSR5Rochester Electronics |
FET RF 65V 1.66GHZ NI-780S |
|
CGHV1F006SWolfspeed - a Cree company |
RF MOSFET HEMT 40V 12DFN |
|
MRF8S23120HR5NXP Semiconductors |
FET RF 65V 2.3GHZ NI-780 |
|
ARF463AP1GRoving Networks / Microchip Technology |
RF PWR MOSFET 500V 9A TO-247 |
|
IGN1011L70Integra Technologies |
GAN, RF POWER TRANSISTOR, L-BAND |
|
BLC9G20LS-240PVZAmpleon |
RF FET LDMOS 65V 18DB SOT12753 |
|
ARF460BGRoving Networks / Microchip Technology |
FET RF N-CH 500V 14A TO247 |
|
BLF647P,112Ampleon |
RF FET LDMOS 65V 18DB SOT1121A |
|
BF909AWR,115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
BF1206,115Rochester Electronics |
FET RF 6V 400MHZ 6TSSOP |
|
CGHV35060MPWolfspeed - a Cree company |
RF MOSFET HEMT 50V 20TSSOP |