







DIODE GP 2.4KV 600A POWRBLOK
RF MOSFET HEMT 28V 440193
SENSOR 300PSI 1/8-27NPT 4-20MA
TOUCH SCREEN CAPACITIVE 15.65"
| 类型 | 描述 |
|---|---|
| 系列: | GaN |
| 包裹: | Tray |
| 零件状态: | Active |
| 晶体管型: | HEMT |
| 频率: | 0Hz ~ 4GHz |
| 获得: | 19dB |
| 电压测试: | 28 V |
| 额定电流(安培): | 28A |
| 噪声系数: | - |
| 电流测试: | 1 A |
| 功率输出: | 120W |
| 额定电压: | 84 V |
| 包/箱: | 440193 |
| 供应商设备包: | 440193 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BLF8G10LS-270V,118Ampleon |
RF FET LDMOS 65V 19.5DB SOT1244B |
|
|
AFT21S232SR3NXP Semiconductors |
FET RF 65V 2.11GHZ NI780S-2 |
|
|
2N5950Rochester Electronics |
SMALL SIGNAL FET |
|
|
BLF7G10LS-250,118Ampleon |
RF FET LDMOS 65V 19.5DB SOT502B |
|
|
PD85006L-ESTMicroelectronics |
TRANS RF POWER POWERFLAT5X5 |
|
|
MRF160Metelics (MACOM Technology Solutions) |
FET RF 65V 500MHZ 249-06 |
|
|
ARF465BGRoving Networks / Microchip Technology |
RF PWR MOSFET 1200V 6A TO-247 |
|
|
2N5245Rochester Electronics |
SMALL SIGNAL FET |
|
|
MRFE6VP61K25HR5NXP Semiconductors |
FET RF 2CH 133V 230MHZ NI-1230 |
|
|
AFV121KHSR5NXP Semiconductors |
IC TRANS RF LDMOS |
|
|
BLF8G27LS-100V,112Ampleon |
RF MOSFET LDMOS 28V CDFM6 |
|
|
BLC10G18XS-551AVZAmpleon |
BLC10G22XS-551AV/SOT1258/TRAYDP |
|
|
BF510,215Rochester Electronics |
BF510 - RF SMALL SIGNAL FIELD-EF |