







RF 2-ELEMENT, S BAND, N-CHANNEL
IC FULLY INTEG PROCESSOR 64TQFP
CAP FEEDTHRU 1000PF 100V AXIAL
IC SRAM 2MBIT PARALLEL 100TQFP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 晶体管型: | LDMOS (Dual) |
| 频率: | 1.92GHz |
| 获得: | 16.4dB |
| 电压测试: | 28 V |
| 额定电流(安培): | - |
| 噪声系数: | - |
| 电流测试: | 550 mA |
| 功率输出: | 37W |
| 额定电压: | 65 V |
| 包/箱: | NI-780S-4 |
| 供应商设备包: | NI-780S-4 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BLF8G19LS-170BV,11Ampleon |
RF FET LDMOS 65V 18DB SOT1120B |
|
|
BLM7G22S-60PBYAmpleon |
RF FET LDMOS 65V 31.5DB SOT12121 |
|
|
BF2040WH6814XTSA1IR (Infineon Technologies) |
MOSFET N-CH 8V 40MA SOT343 |
|
|
BLF8G27LS-150GVJAmpleon |
RF FET LDMOS 65V 18DB SOT1244C |
|
|
BLP27M810ZAmpleon |
RF FET LDMOS 65V 17DB 16VDFN |
|
|
BLS9G2731LS-400UAmpleon |
RF MOSFET LDMOS 32V SOT502B |
|
|
MRFE6VP61K25HSR5NXP Semiconductors |
FET RF 2CH 133V 230MHZ NI-1230S |
|
|
BLM7G1822S-20PBYAmpleon |
RF FET LDMOS 65V 32.3DB SOT12111 |
|
|
BLF2425M7LS140,112Rochester Electronics |
RF PFET, 1-ELEMENT, S BAND, SILI |
|
|
BLF8G10LS-160,112Rochester Electronics |
RF PFET, 1-ELEMENT, ULTRA HIGH F |
|
|
MMBFJ211Sanyo Semiconductor/ON Semiconductor |
JFET N-CH 25V 20MA SOT23 |
|
|
ARF461BGRoving Networks / Microchip Technology |
RF MOSFET N-CH 1000V TO247 |
|
|
BLF8G27LS-140,112Ampleon |
RF FET LDMOS 65V 17.4DB SOT502B |