English
简体中文
RES 1.37K OHM 1% 1/4W 0805
RES 442 OHM 0.1% 1/16W 0603
RF FET LDMOS 65V 12DB SOT502B
CONN PLUG MALE 13P SILV SLDR CUP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 晶体管型: | LDMOS |
| 频率: | 3.5GHz |
| 获得: | 12dB |
| 电压测试: | 32 V |
| 额定电流（安培）: | - |
| 噪声系数: | - |
| 电流测试: | 100 mA |
| 功率输出: | 200W |
| 额定电压: | 65 V |
| 包/箱: | SOT-502B |
| 供应商设备包: | SOT502B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BLF7G20LS-200,118Ampleon |
RF FET LDMOS 65V 18DB SOT502B |
|
NE3515S02-T1D-ARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
BLF6G38-10G,112Ampleon |
RF FET LDMOS 65V 14DB SOT975C |
|
MRF6P18190HR6Rochester Electronics |
RF K BAND, N-CHANNEL |
|
BLC9H10XS-600AZAmpleon |
BLC9H10XS-600A/SOT1250/TRAYDP |
|
BLF8G22LS-140UAmpleon |
RF FET LDMOS 65V 18.5DB SOT502B |
|
3SK292(TE85R,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 12.5 30MA SMQ |
|
AFT27S012NT1NXP Semiconductors |
AIRFAST RF POWER LDMOS TRANSISTO |
|
NE5550979A-T1-ARochester Electronics |
RF N-CHANNEL POWER MOSFET |
|
AFT05MS031GNR1NXP Semiconductors |
FET RF 40V 520MHZ TO270-2G |
|
BLS6G3135-120,112Ampleon |
RF FET LDMOS 60V 11DB SOT502A |
|
PTFA210701FV4R250XTMA1IR (Infineon Technologies) |
IC FET RF LDMOS 70W H-37265-2 |
|
PTFB191501FV1XWSA1IR (Infineon Technologies) |
FET RF LDMOS 150W H37248-2 |