类型 | 描述 |
---|---|
系列: | OptiMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 84A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 2.9mOhm @ 84A, 10V |
vgs(th) (最大值) @ id: | 3.3V @ 75µA |
栅极电荷 (qg) (max) @ vgs: | 66 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5125 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 38W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO220-FP |
包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NP15P04SLG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 15A TO252 |
|
BUZ100SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD6782ARochester Electronics |
MOSFET N-CH 25V 20A DPAK |
|
DMP3099LQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.8A SOT23 T&R |
|
NTD3808N-35GRochester Electronics |
MOSFET N-CH 16V 12A/76A IPAK |
|
TSM70N900CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A TO252 |
|
BSZ0500NSIATMA1Rochester Electronics |
MOSFET N-CH 30V 30A/40A TSDSON |
|
IXFP4N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 4A TO220AB |
|
SPD04P10PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 100V 4.2A TO252-3 |
|
TSM170N06PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 44A 8PDFN |
|
AOTF260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 19A/92A TO220-3F |
|
VN0550N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
AOW190A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262 |