类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 16 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Ta), 76A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 5.8mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 4.5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 1.66 pF @ 12 V |
场效应管特征: | - |
功耗(最大值): | 1.3W (Ta), 52W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TSM70N900CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 4.5A TO252 |
|
BSZ0500NSIATMA1Rochester Electronics |
MOSFET N-CH 30V 30A/40A TSDSON |
|
IXFP4N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 4A TO220AB |
|
SPD04P10PLGBTMA1IR (Infineon Technologies) |
MOSFET P-CH 100V 4.2A TO252-3 |
|
TSM170N06PQ56 RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 44A 8PDFN |
|
AOTF260LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 19A/92A TO220-3F |
|
VN0550N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
AOW190A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262 |
|
IPI65R310CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A IPAK |
|
RSR025P03HZGTLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
FQD3N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
|
TK60E08K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 60A TO220-3 |