English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Ta), 92A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 2.6mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 210 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11800 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.9W (Ta), 46.5W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
VN0550N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |
|
AOW190A60CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 20A TO262 |
|
IPI65R310CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STU13N65M2STMicroelectronics |
MOSFET N-CH 650V 10A IPAK |
|
RSR025P03HZGTLROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
|
FQD3N60CTM-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
|
TK60E08K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 60A TO220-3 |
|
TK20S04K3L(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 20A DPAK |
|
IXFA110N15T2Wickmann / Littelfuse |
MOSFET N-CH 150V 110A TO263 |
|
C3M0016120DWolfspeed - a Cree company |
SICFET N-CH 1200V 115A TO247-3 |
|
IXTA3N110-TRLWickmann / Littelfuse |
MOSFET N-CH 1100V 3A TO263 |
|
IRFR6215PBFRochester Electronics |
PFET, 13A I(D), 150V, 0.295OHM, |
|
NTBG020N090SC1Sanyo Semiconductor/ON Semiconductor |
SICFET N-CH 900V 9.8A/112A D2PAK |
