类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 28A (Ta), 49A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2mOhm @ 28A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 6.42 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 83W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-PQFN (5x6) |
包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AUIRLR120NTRLIR (Infineon Technologies) |
MOSFET N-CH 100V 10A DPAK |
|
2SK3566(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 900V 2.5A TO220SIS |
|
TSM5NC50CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 500V 5A TO252 |
|
NTMS10P02R2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 8.8A 8SOIC |
|
STP25N60M2-EPSTMicroelectronics |
MOSFET N-CH 600V 18A TO220 |
|
DMT10H015LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 100V 50A TO252 |
|
SUD50N06-08H-E3Vishay / Siliconix |
MOSFET N-CH 60V 93A TO252 |
|
SIA440DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 12A PPAK SC70-6 |
|
CSD13303W1015Rochester Electronics |
MOSFET N-CH 12V 31A 6DSBGA |
|
AO6409AAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 5.5A 6TSOP |
|
SCH1333-TL-HRochester Electronics |
MOSFET P-CH 20V 2A 6SCH |
|
IRFP4310ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 120A TO247AC |
|
SI7858ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 12V 20A PPAK SO-8 |