RES ARRAY 7 RES 56K OHM 14SOIC
MOSFET N-CH 150V 4.1A 8SOIC
类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 4.1A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 6V, 10V |
rds on (max) @ id, vgs: | 67mOhm @ 4.1A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 760 pF @ 75 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 5W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOIC |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FQB6N90TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIA477EDJT-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |
|
STP15NK50ZFPSTMicroelectronics |
MOSFET N-CH 500V 14A TO220FP |
|
FDN306PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 2.6A SUPERSOT3 |
|
IPA80R310CEXKSA1Rochester Electronics |
MOSFET N-CH 800V 6.8A TO220 |
|
IPP60R280E6XKSA1Rochester Electronics |
MOSFET N-CH 600V 13.8A TO220-3 |
|
SQJA68EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 14A PPAK SO-8L |
|
FDS6673BZ-F085Rochester Electronics |
MOSFET P-CH 30V 14.5A 8SOIC |
|
TSM4NB60CH X0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO251 |
|
FDB8896Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/93A TO263AB |
|
IRFR9014PBFVishay / Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
|
HUF76419S3ST_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDD86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8A/35A DPAK |