RES SMD 41.2K OHM 1% 3/4W 1812
HIGH SPEED N-CHANNEL LATERAL DMO
类型 | 描述 |
---|---|
系列: | SD211 |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 50mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V, 25V |
rds on (max) @ id, vgs: | 45Ohm @ 1mA, 10V |
vgs(th) (最大值) @ id: | 1.5V @ 1µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | +25V, -300mV |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 300mW (Ta) |
工作温度: | -55°C ~ 125°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-72-4 |
包/箱: | TO-206AF, TO-72-4 Metal Can |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFP4368PBFIR (Infineon Technologies) |
MOSFET N-CH 75V 195A TO247AC |
|
NTD70N03RT4Rochester Electronics |
MOSFET N-CH 25V 10A/32A DPAK |
|
AUIRF7648M2TRIR (Infineon Technologies) |
MOSFET N-CH 60V 14A DIRECTFET |
|
FQPF7P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 5.2A TO220F |
|
HUF76633S3SRochester Electronics |
MOSFET N-CH 100V 39A D2PAK |
|
STI20N65M5STMicroelectronics |
MOSFET N-CH 650V 18A I2PAK |
|
IXTH3N150Wickmann / Littelfuse |
MOSFET N-CH 1500V 3A TO247 |
|
IXFX38N80Q2Wickmann / Littelfuse |
MOSFET N-CH 800V 38A PLUS247-3 |
|
DMN65D8LW-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 300MA SOT323 |
|
DMN2990UFZ-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 250MA 3DFN |
|
NVD2955T4GRochester Electronics |
MOSFET P-CH 60V 12A DPAK |
|
AUIRFS4010Rochester Electronics |
MOSFET N-CH 100V 180A TO263 |
|
SSM3J358R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 6A SOT23F |