English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 23.9mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.7 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 655 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.9W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-WSON (2x2) |
| 包/箱: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EPC2207EPC |
TRANS GAN 200V DIE .022OHM |
|
SCT3030ALHRC11ROHM Semiconductor |
SICFET N-CH 650V 70A TO247N |
|
1HP04CH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 170MA 3CPH |
|
2SK937Y5Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
SI2306BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3 |
|
NTR1P02LT1Rochester Electronics |
MOSFET P-CH 20V 1.3A SOT23-3 |
|
BSC090N03MSGATMA1Rochester Electronics |
MOSFET N-CH 30V 12A/48A TDSON |
|
IXTP12N70X2Wickmann / Littelfuse |
MOSFET N-CH 700V 12A TO220AB |
|
IPW60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO247-3 |
|
FDP100N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
STF15N65M5STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
NTTFS6H850NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14.8A/64A 8WDFN |
|
BSP125L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
