类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI2306BDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.16A SOT23-3 |
|
NTR1P02LT1Rochester Electronics |
MOSFET P-CH 20V 1.3A SOT23-3 |
|
BSC090N03MSGATMA1Rochester Electronics |
MOSFET N-CH 30V 12A/48A TDSON |
|
IXTP12N70X2Wickmann / Littelfuse |
MOSFET N-CH 700V 12A TO220AB |
|
IPW60R170CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO247-3 |
|
FDP100N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 75A TO220-3 |
|
STF15N65M5STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
NTTFS6H850NLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 14.8A/64A 8WDFN |
|
BSP125L6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP11N65M2STMicroelectronics |
MOSFET N-CH 650V 7A TO220 |
|
APT60N60SCSGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 60A D3PAK |
|
UPA2717AGR-E1-ATRochester Electronics |
MOSFET P-CH 30V 15A 8PSOP |
|
IPD70P04P409ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 73A TO252-3 |