English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 7mOhm @ 17A, 10V |
| vgs(th) (最大值) @ id: | 2.8V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 64.2 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2826 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.4W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK7M9R5-40HXNexperia |
MOSFET N-CH 40V 40A LFPAK33 |
|
IPI040N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO262-3 |
|
IPB60R045P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 61A TO263-3-2 |
|
DN1509K1-GRoving Networks / Microchip Technology |
MOSFET N-CH 90V 200MA SOT23-5 |
|
FDFME2P823ZTRochester Electronics |
2.6A, 20V, P-CHANNEL MOSFET |
|
DMTH8003SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 100A PWRDI5060-8 |
|
IXFT32N100XHVWickmann / Littelfuse |
MOSFET N-CH 1000V 32A TO268HV |
|
IXTP1R6N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 1.6A TO220AB |
|
SIHF23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO220 |
|
IPT020N10N3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 300A 8HSOF |
|
FCPF380N60-F152Rochester Electronics |
600V, N-CHANNEL, MOSFET, TO-220 |
|
AUIRLR014NRochester Electronics |
MOSFET N-CH 55V 10A DPAK |
|
AOD66923Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 16.5A/58A TO252 |
