English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4mOhm @ 60A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 85 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6750 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 330W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TSM240N03CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 6.5A SOT23 |
|
FDD2512Rochester Electronics |
MOSFET N-CH 150V 6.7A TO252 |
|
IPI80N06S208AKSA2IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO262-3 |
|
SIHB23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A D2PAK |
|
SFT1342-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A TP |
|
SIHG105N60EF-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A TO247AC |
|
FDZ7064SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RQ1E070RPTRROHM Semiconductor |
MOSFET P-CH 30V 7A TSMT8 |
|
BUK9509-40B,127Rochester Electronics |
PFET, 75A I(D), 40V, 0.01OHM, 1- |
|
BSC889N03LSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IMW120R060M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 36A TO247-3 |
|
IPW60R280C6Rochester Electronics |
MOSFET N-CH 600V 13.8A TO247-3 |
|
SPB02N60C3ATMA1Rochester Electronics |
MOSFET N-CH 650V 1.8A TO263-3 |
