English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 25mOhm @ 5.8A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 641 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 780mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQI2N90TURochester Electronics |
MOSFET N-CH 900V 2.2A I2PAK |
|
NTP85N03Rochester Electronics |
MOSFET N-CH 28V 85A TO220AB |
|
SPI21N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 21A TO262-3 |
|
NVTFS4C08NTWGRochester Electronics |
MOSFET N-CH 30V 17A 8WDFN |
|
FQP5N60CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4.5A TO220-3 |
|
IPD70R2K0CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO252-3 |
|
IPB180N04S4L01ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
TPS1101DRTexas Instruments |
MOSFET P-CH 15V 2.3A 8SOIC |
|
IPP60R360P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220-3 |
|
SSM3K37MFV,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA VESM |
|
MMBF1374T1Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
SIHF7N60E-GE3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 7A TO220 |
|
FDMS1D4N03SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 211A 8PQFN |
