类型 | 描述 |
---|---|
系列: | UniFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 300 V |
电流 - 连续漏极 (id) @ 25°c: | 59A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 56mOhm @ 29.5A, 10V |
vgs(th) (最大值) @ id: | 5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
vgs (最大值): | ±30V |
输入电容 (ciss) (max) @ vds: | 4670 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 500W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-3PN |
包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BSZ180P03NS3EGATMA1IR (Infineon Technologies) |
MOSFET P-CH 30V 9A/39.5A TSDSON |
|
R5009FNXROHM Semiconductor |
MOSFET N-CH 500V 9A TO220FM |
|
FQL40N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 40A TO264-3 |
|
SQM40020E_GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A TO263 |
|
BUK7E4R6-60E,127Nexperia |
MOSFET N-CH 60V 100A I2PAK |
|
BSB028N06NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 22A/90A 2WDSON |
|
NTE2385NTE Electronics, Inc. |
MOSFET N-CHANNEL 500V 8A TO220 |
|
BUK9Y72-80E,115Nexperia |
MOSFET N-CH 80V 15A LFPAK56 |
|
AOB15S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 15A TO263 |
|
SI4896DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A 8SO |
|
STL115N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
NTNS3A91PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 223MA 3XLLGA |
|
IRF6775MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 4.9A DIRECTFET |