English
简体中文
MOSFET N-CH 650V 15A TO263
CONN MOD JACK 8P8C
IC REG LINEAR 2.2V 150MA SOT23-5
800MMW X 48 RU X 1219MMD N TYPE,
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | aMOS™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Not For New Designs |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 290mOhm @ 7.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.2 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 841 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D²Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI4896DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 6.7A 8SO |
|
STL115N10F7AGSTMicroelectronics |
MOSFET N-CH 100V 107A POWERFLAT |
|
NTNS3A91PZT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 223MA 3XLLGA |
|
IRF6775MTRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 4.9A DIRECTFET |
|
FQPF2N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 1.5A TO220F |
|
NVD14N03RT4GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPP70N10S3L12AKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 70A TO220-3 |
|
CSD19532KTTTTexas Instruments |
MOSFET N-CH 100V 200A DDPAK |
|
BUK7M15-60EXNexperia |
MOSFET N-CH 60V 42.9A LFPAK33 |
|
IPW50R399CPFKSA1Rochester Electronics |
MOSFET N-CH 560V 9A TO247-3 |
|
BUZ76Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS5C677NLWFT1GRochester Electronics |
MOSFET N-CH 60V 11A/36A 5DFN |
|
SUM70030M-GE3Vishay / Siliconix |
MOSFET N-CH 100V 150A TO263-7 |